AlGaP LEDs optimization

Under operating conditions, heterostructures can be exposed to high-energy radiation, for example, in space or at nuclear power or medical objects, which can lead to AlGaP LEDdegradation. Heterostructure resistance investigation is currently relevant and in the future will allow to create express method of predicting LED life time during their design and the possibilities for optimizing LEDs. Investigations of spectral parameters under irradiation cycles influence was carried out. It was detected that for increase life time and to decrease damage is need to use bulk substrates GaP.