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Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
2016
Cao-Minh Vincent Lu
Claire Fenouillet-Beranger
Jean-Michel Hartmann
Philippe Rodriguez
V. Benevent
Marie-Pierre Samson
B. Previtali
C. Tabone
Mikael Casse
F. Allain
Giovanni Romano
Laurent Brunet
Perrine Batude
Thomas Skotnicki
Maud Vinet
Keywords:
Field-effect transistor
Electrical engineering
Geography
Materials science
Engineering physics
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