3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity ( $\sim 3\times 10^{\mathrm {{-5}}} \Omega ~\cdot $ cm $^{2})$ ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with as-deposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value ( $\sim 80$ cm $^{\mathrm {{2}}}$ /V $\cdot $ s) was achieved compared with the annealed devices.