Electronic structure of binary and ternary Ga or As oxides.

A systematic analysis of the electronic structure of As 2 O 3 , As 2 O 5 , Ga 2 O 3 , and GaAsO 4 is made both experimentally and theoretically. The comparison between x-ray-photoemission spectra and tight-binding calculations allows us to recognize the contribution of each atomic state to each experimental peak