High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing

High dopant (phosphorus) activation of 24% and 27% in strained and relaxed Ge 0.93 Sn 0.07 films are demonstrated by microwave annealing, respectively. The annealing effects on the carrier activation in strained and relaxed GeSn films by RTA and MWA were also investigated.