Old Web
English
Sign In
Acemap
>
Paper
>
Electrical Characterization of Si Capped HfO2/Metal Gate Ge-pFETs: Physical Insight into Critical Parameters
Electrical Characterization of Si Capped HfO2/Metal Gate Ge-pFETs: Physical Insight into Critical Parameters
2010
Jerome Mitard
Benjamin Vincent
Brice Dejaeger
Koen Martens
Raymond Krom
R. Loo
Geert Eneman
Kristin DeMeyer
Marc Meuris
Marc Heyns
Wilfried Vandervorst
Matty Caymax
Thomas Hoffmann
Keywords:
Metal gate
Nanotechnology
Molecular physics
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]