Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin‐film characterization

The prototype of an infrared spectroscopic ellipsometer using a Fourier transform PC‐based infrared spectrometer is described. Several applications in thin‐film characterization are given, particularly in the case of bulk substrate, thick‐layered materials, and determination of the dielectric function of layered materials such as silicon oxide and silicon nitride. The sensitivity and possible improvements of this technique are discussed.