Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diodee grown by CBE

Continuous wave output power levels of 600 mW at 25 o C are reported from 100 μm wide, 300 μm long GaInAs/GaAs/GaInP large area laser diodes grown by CBE without any facet treatment. At these levels, the delivered current is 2A, with an associated voltage of less than 1-7 V. The characteristic temperature of the structure is 95 K