Mechanism for FinFET doped well

In the present invention describes embodiments for a mechanism well doped FinFET device, this embodiment utilizes depositing a doped film doped well region. This mechanism so as to maintain a lower dopant concentration in the doped channel region near the well region. As a result, it can greatly improve transistor performance. The mechanism comprises a doped film deposited before the formation of the isolation structure of the transistor. Doped film doped with a dopant in the well region close to the fin. Isolation structure filled with the flowable dielectric material, in the case of using a microwave anneal, the flowable dielectric material into silicon oxide. So that the microwave annealing the flowable dielectric material into silicon oxide without causing dopant diffusion. Additional embodiments may well implantation to form the deep well. Microwave annealing may be used to anneal the substrate and defects in the fin. The present invention relates to a mechanism for FinFET doped well.