Memristors based on amorphous ZnSnO films

Abstract Memristors based on amorphous oxide semiconductors (AOSs) have attracted considerable attention recently. Here we present the study of amorphous ZnSnO ( a -ZTO) memristors. The a -ZTO memristors were fabricated with Al layers as the bottom and top electrodes. The a -ZTO thin films, deposited by pulsed laser deposition, could be formed on the Al layer uniformly, and the Al layers were effective electrodes for a -ZTO memristors. It was verified that the a -ZTO memristors had obvious resistive switching (RS) behaviors, with a high ratio (∼10 3 ) of high-resistance and low-resistance states. Almost the same current-voltage curves were observed for five cycles, revealing the stable and reliable nature of devices. Our study demonstrated the a-ZTO memristors is a potential candidate to produce high-quality resistive random-access memories, which may open a path to applications of memristors based on indium-free AOSs.