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Etch characteristics of GaN using inductively coupled Cl[sub 2]/Ar and Cl[sub 2]/BCl[sub 3] plasmas
Etch characteristics of GaN using inductively coupled Cl[sub 2]/Ar and Cl[sub 2]/BCl[sub 3] plasmas
1998
Yen H. Lee
Keywords:
Plasma
Analytical chemistry
Chemistry
Inorganic chemistry
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