Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

Thin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600°C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.