Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation

An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed based on the observed characteristics (Fig. 1). The temperature dependent compensating current elements are considered to be in parallel with the HEMT channel between the drain and the source. These currents contribute to the total current at high temperature. The three compensating current elements are: (i) the body leakage current, I R (ii) current change due to the threshold voltage change, I TH and (iii) current change due to the change of drain and source contact region resistance, I RDS . Room temperature (300K) is taken as the reference temperature. The channel current, I D is calculated at room temperature based on the charge control model. Channel current is kept constant for all temperature. The compensating currents incorporate the change in the HEMT's current.