Thiol–ene Cross-Linked Polymer Gate Dielectrics for Low-Voltage Organic Thin-Film Transistors

We report a low-temperature processed, hydroxyl-free poly(vinyl phenyl) (PVP) dielectric layer cross-linked using thiol–ene chemistry. This new dielectric material exhibited a high dielectric constant as compared to conventional hydroxyl-free polymer dielectrics, e.g. polystyrene, and allowed for cross-linking at 80 °C, which is lower than the glass transition temperature of most commonly used plastic substrates, e.g. poly(ethylene terathalate) (PET). Due to the absence of hydroxyl groups, the dielectric layer displayed more stable performance than other previously reported cross-linked PVP dielectrics. The low-temperature processing, high air stability, and low current–voltage hysteresis while retaining high device performances are important advantages of this new dielectric material.