Studies of thin poly Si oxides for E and E 2 PROM

Electrical conductivity of thin poly Si oxides, 400-600A thick, has been investigated. Using an annealing prior to the oxidation, the relationship between electrical conductivity and the phosphorus concentration in the oxide has been estimated for the same poly Si asperity. The leakage current through the poly Si oxide increases with increasing phosphorus concentration in the oxide. The redistributed phosphorus concentration strongly depends on the oxidation conditions. This can be explained by segregation and transportation at the poly Si-SiO 2 interface.