Comparative Study of Different Semiconductor Devices and Their Temperature Dependence

In this paper, the temperature dependence of current in a p-type and n- type semiconductor is studied using a low temperature shock experiment. The semiconductor devices used for the study are LED and two types of Bipolar Junction Transistor (BJT): NPN type and PNP type. The results for NPN and PNP type BJTs were analyzed. From the results it is observed that the current will increase more after sudden temperature drop than the gradual temperature reduction for all three semiconductor devices. Further, it is observed that, the emitter current difference is more in PNP transistor than the NPN transistor.