HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

The High Electron Mobility Transistor (HEMT) is an important device for high speed, high frequency, digital circuits and microwave circuits with low noise applications. These applications include telecommunications, computing and instrumentation. Instead of p-n junction, metalsemiconductor junction (reverse-biased Schottky barrier) is used, where the simplicity of Schottky barriers allows fabrication to close geometrical tolerances. There are particular speed advantages for MESFET devices in III-IV compounds such as GaAs or InP, which have higher mobilities and carrier drift velocities than Si. Keyword: HEMT, MESFET, GaAs, AlGaAs