TOF‐SIMS MS/MS Depth Profiling of OLED Devices for Elucidating the Degradation Process

RATIONALE: Organic light-emitting diode (OLED) products based on display applications have become popular in the past 10 years, and new products are being commercialized with rapid frequency. Despite the many advantages of OLEDs, these devices still have a problem concerning lifetime. To gain an understanding of the degradation process, the authors have investigated the molecular information for deteriorated OLED devices using time-of-flight secondary ion mass spectrometry (TOF-SIMS). METHODS: TOF-SIMS depth profiling is an indispensable method for evaluating OLED devices. However, the depth profiles of OLEDs are generally difficult due to the mass interference among organic compounds, including degradation products. In this study, the tandem mass spectrometry (MS/MS) depth profiling method was used to characterize OLED devices. RESULTS: After degradation, defects comprised of small hydrocarbons were observed. Within the defect area, the diffusion of all OLED compounds was also observed. It is supposed that the source of the small hydrocarbons derives from decomposition of the OLED compounds and/or contaminants at the ITO interface. CONCLUSIONS: The true compound distributions have been determined using MS/MS depth profiling methods. The results suggest that luminance decay is mainly due to the decomposition and diffusion of OLED compounds, and that OLED decomposition may be accelerated by adventitious hydrocarbons present at the ITO surface.