Differently oriented nanowires with gate electrode stacks as tension members

There will be described an electronic device having a conductive channel, which defines a crystal structure and a length and a thickness t Furthermore, the gate electrode stack comprises a material that exerts a compressive force or a tensile force in such a way to the contact surface of the channel that due to the compressive force or the tension force in dependence on the electrical mobility of the charge carriers (electrons or holes) over the length of the channel of orientation of the longitudinal axis of the channel is increased with respect to the crystal structure. There are embodiments for chips in which the mobility of both the holes and the electrons is increased in various transistors, and a method for manufacturing such a transistor or chips specified.