Trim simulations and possible studies for edge-on ion irradiation of electron microscope specimens. [Co ions implanted into Si to form CoSi[sub 2]]

A TRIM code has been modified to simulate a special technique, first described at the Spring 92 MRS Meeting, for in-situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen without further specimen preparation. Instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in essentially the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction of the irradiation. Results of calculations utilizing the modified TRIM code are presented for cases of 200 and 500 keV Co impinging onto the edge of Si films 200 and 600 nm thick. Limitations of the technique are discussed and feasibility of experiments involving implantation of Co into Si and the formation of CoSi[sub 2], which employ this technique, are briefly discussed. 10 refs, 3 figs.