Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation

The temperature dependence of reflectance and transmittance of a thin (2 μm) CdS film prepared by laser ablation was investigated. The measurements were performed with the 514.5 nm line of an argon laser in the range 180–350 K. It occurred that due to locally enhanced absorption at the film/substrate interface, the transmitted light was considerably weaker than would be theoretically expected for a homogeneous layer. The reflectance, however, followed the theory based on Urbach’s rule. The interfacial enhancement of the absorption was confirmed by luminescence investigations.