Field-Effect Transistors 5: Vertical Ga2O3 Fin-Channel Field-Effect Transistors and Trench Schottky Barrier Diodes

Recently, significant progresses have been made on the demonstration and development of vertical gallium oxide power devices. The goal of this chapter is to give a brief review on vertical gallium oxide FinFETs and Schottky barrier diodes based on fin-channel structures. In both devices, vertical fin-shaped channels are the key to achieving high breakdown voltages and low on-resistances simultaneously. The chapter starts with a short introduction of vertical transistor concepts and development in various wide band gap semiconductors, then moves on to topics including vertical gallium oxide FinFET structures, device operation, high voltage design and baseline fabrication process flow. Fundamental electrical performance will be discussed, followed by our analysis on threshold voltage control, drain-induced barrier lowering effects and breakdown mechanisms. Finally, we will briefly mention our key results on vertical trench Schottky barrier diodes.