Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
2013
N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
1
Citations
NaN
KQI