Temperature effect on gain and threshold current of GaInNAs-based 1.3 µm semiconductor laser

We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 µm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 µm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.