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Realization of memory operation by means of Ni-Zn-ferrite thin-film on MOS-FET
Realization of memory operation by means of Ni-Zn-ferrite thin-film on MOS-FET
2002
Satoshi Mizukami
Kan Shimizu
Osamu Sakurai
Naoki Wakiya
Kazuo Shinozaki
Nobuyasu Mizutani
Keywords:
Hall effect
Thin film
Ferrite (magnet)
Electronic engineering
Materials science
Optoelectronics
electric properties
ferromagnetic thin films
memory operation
Electrical engineering
Correction
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