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Acemap > Paper > Si基板上に作製したAlGaN/GaN-HEMTの高周波特性(窒化物及び混晶半導体デバイス)

Si基板上に作製したAlGaN/GaN-HEMTの高周波特性(窒化物及び混晶半導体デバイス)

2006 
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