Electrostatics and performance benchmarking using all types of III–V multi-gate FinFETs for sub 7nm technology node logic application

In this paper, we conducted the sub 7nm technology benchmarking for logic application using performance comparison between III-V multi-gate(double, tri, gate-all-around) nMOSFET and Si nFinFET. The benchmarking was executed based on the physical parameters extracted from Virtual-Source(VS) modeling and well-calibrated TCAD simulation. Especially by quantitatively investigating fin width(W fin ) and interface trap(D it ) effects on electrostatic of III-V multi-gate(MG) nMOSFET which is critical to device scaling, we proposed a device design strategy for sub 7nm technology node.