Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substrates

G. H. Olsen,T. J. Zamerowski,F. Z. Hawrylo

Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substrates

1982

G. H. Olsen
T. J. Zamerowski
F. Z. Hawrylo

Abstract Surface morphology, photoluminescence, lattice mismatch and growth rate results are reported. Superior properties have been found with the (311) B and (511) B orientations.

Keywords:

Crystallography
Photoluminescence
Chemistry
Inorganic chemistry
vapor growth
Growth rate
lattice mismatch
Morphology (linguistics)

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