A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology

This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 μm GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of −17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are −47.9, −34.8 and −27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are +7 dBm and +17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm 2 .