Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga 2 O 3

Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga 2 O 3 , with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga 2 O 3 substrates and for the fabrication of high power β -Ga 2 O 3 devices.