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Acemap > Paper > Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip

Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip

2014 
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