A review of SOI transistor models

Several SOI MOSFET models based on 1-D solution of Poisson's equation are compared in terms of their accuracy. A brief discussion of the simplifying assumptions leads to a conclusion that the methods used for surface potential evaluation strongly influence the accuracy of a model. An analytical approximation for the front surface potential is presented and then introduced into the fully analytical Lim-Fossum model [1]. The accuracy of the modified model is better than that of the original Lim-Fossum model [1].