0.5 V Supply Voltage Operation of In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 Tunnel FET

In this letter, we demonstrate using fast current-voltage measurements, low switching slope of 64 mV/decade over a drain current range between $10^{\mathrm {\mathbf {-3}}}$ and $2 \times 10^{\mathrm {\mathbf {-2}}} \mu $ A/ $\mu $ m in staggered-gap In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 tunneling field-effect transistors (TFETs) at $\mathrm{V}_{\mathrm {\mathbf {DS}}}\,=\,0.5$ V. This is achieved through a combination of low damage mesa sidewall etch and improvement in electrical quality of the high- $\kappa $ gate-stack. Benchmarking our results against experimentally demonstrated TFETs, we conclude that, the staggered-gap TFETs are capable of achieving simultaneously high drive current and low switching slope.