The semiconductor light emitting device and a semiconductor light emitting device

A high brightness, high efficiency, to provide a semiconductor light emitting device to achieve a high reliability. The semiconductor light emitting device according to the A embodiment comprises a stacked structure, and the electrode. Layered structure comprises a first semiconductor layer of a first conductivity type made of a nitride-based semiconductor, and a second semiconductor layer of a second conductivity type formed of a nitride-based semiconductor, the second semiconductor layer and the first semiconductor layer having a light emitting layer provided between the. Electrode has a first metal layer, a second metal layer and the third metal layer. The first metal layer, the light emitting layer of the second semiconductor layer provided on the opposite side, comprises silver or a silver alloy. The second metal layer includes the second semiconductor layer of the first metal layer provided on the opposite side, gold, platinum, palladium, rhodium, iridium, ruthenium, at least one element of osmium. The third metal layer, the first metal layer of the second metal layer is provided on the opposite side. Thickness along the direction toward the second semiconductor layer from the first semiconductor layer of the third metal layer is greater than or equal to the thickness along the direction of the second metal layer. .FIELD 1