Effective interface pretreatment for amorphous-crystalline silicon heterojunction solar cells

Effective interface pretreatment has been applied to investigate the role of oxygen incorporation between hydrogenated amorphous silicon (a-Si:H) passivation layer and crystalline silicon (c-Si). Oxygen content in the a-Si:H/c-Si interface can be cut down with a thermal pretreatment process of c-Si. High stretching mode in the intrinsic a-Si:H layer increases with the reduction of oxygen content. Both the interface with less oxygen and the a-Si:H layer with high HSM contribute to achieve a high minority carrier lifetime of more than 8 ms on the czochralski-grown c-Si wafer passivated by the intrinsic a-Si:H.