Transport-reaction model for interface state build-up at the Si-SiO/sub 2/ interface [in MOSFETs]
1999
The MOS interface state build-up process was simulated for a 1D MOS structure within a framework of reaction-transport model. The identified kinetics are summarized as simple power laws. The transport-limited mode of half power of the stress time has emerged universally regardless of the charge state of transported species.
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