Numerical modeling of SnS ultra-thin solar cells

In modern civilization, the solar energy as renewable energy is chosen for the generation of the clean and green energy which is very reliable in response of sustainable development. The SnS is a binary semiconductor compound which has very favourable optoelectronic properties for lost cost thin film solar cell. Therefore, the researchers have great attention to investigate the ultra-thin SnS solar cell. In this research work, the deep level defects on the performance of SnS solar cells with Bismuth Sulfide (Bi 2 S 3 ) as window layer material was carried out by numerical analysis using SCAPS 2802 simulator. In the proposed cell, the SnS absorber layer was reduced that minimized the cost, saving process time and energy required for fabrication. In this study, it was found that the feasibility of this proposed ultra thin SnS solar cells and showed higher efficiency of 20.05 % (J sc = 36.61 mA/cm 2 , FF = 0.614, Voc = 0.89 V). Consequently, it has been investigated the thermal stability of the SnS solar cell to explore the hidden potentiality of absorber layer.