Possibility of the use of an electrolyte-insulator-semiconductor (EIS) system for investigating the properties of Ta/sub 2/O/sub 5/ in contact with an electrolyte solution

The investigation of the behavior of tantalum pentoxide films in contact with an electrolyte solution is of interest from the point of view of their use in electrolyte capacitors. This work was devoted to an investigation of the properties of Ta/sub 2/O/sub 5/ films obtained by the anodic and thermal oxidation of tantalum on silicon surfaces when they are in contact with an electrolyte solution. The results obtained show that an EIS system can be used to study the properties of Ta/sub 2/O/sub 5/ films associated with the presence of charges either in the oxide film itself or on its boundary with the electrolyte solution.