High endurance of bipolar resistive switching in a Pt/LaNiO3/Nb:SrZrO3/Cu stack: The role of Cu modulating layer

Abstract A bipolar resistive switching characterizes in Pt/LaNiO3/0.2%Nb:SrZrO3/Cu (Pt/LNO/Nb:SZO/Cu) structure was investigated, as the Cu and LNO layers were employed as the capping and buffering layers, respectively. Interestingly, the bistable bipolar switching characteristic was achieved a high endurance performance up to 1.2 × 103 times at room temperature. The Cu layer was served as reservoir layer to influence the distribution of oxygen vacancies and traps inside the films, and leads to a stabilized resistive switching behavior. The Pt/LNO/Nb:SZO/Cu device with low operating voltage, high operating speed, and long retention time, exhibits a high potential in future nonvolatile memory application.