Evaluation of the Analytic Approach for design of deep class AB Power Amplifiers in GaN

Conventionally either load and source-pull measurement systems or more commonly harmonic balance (HB) simulations using large-signal models are used to obtain optimum impedance values to design a power amplifier. As an alternative to these methods, we demonstrated an analytical approach, previously described in [1-3] based on the load line theory popularized by Cripps [4]. Here, we demonstrate our method using a 25W GaN-on-SiC HEMT (CGH40025) at bias conditions ranging from deep class AB to class A .