Old Web
English
Sign In
Acemap
>
Paper
>
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
2018
Wei-Li Lu
Jia Li
Yu Long Fang
Jia Yun Yin
Zhi Hong Feng
Keywords:
Metallurgy
Materials science
Composite material
Epitaxy
Correction
Source
Cite
Save
Machine Reading By IdeaReader
5
References
1
Citations
NaN
KQI
[]