Monitoring extension profile of the test button

The present disclosure provides a method and apparatus for growing a high degree of a semiconductor material other semiconductor epitaxial device for estimating. The method comprising: a first epitaxially grown over the first semiconductor device portion of the semiconductor material, the second and third portions; measuring height and a first portion of the semiconductor material of the third portion of the semiconductor material or the height of the second portion; Measurement a first portion and a first saturation current flowing through the semiconductor material of the second portion; measured flowing through the semiconductor material of the first and second saturation current of the third portion; prepared with respect to the height of the first or second portion of the semiconductor material model of the first and second saturation current saturation current of the first portion of the semiconductor material and the average height of the third portion. The model is used to estimate the height of the semiconductor material other semiconductor device epitaxial growth. The present invention further provides a test monitoring epitaxial contour key.