High-Volume 0.25 μm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography

TriQuint has developed a 150 mm high-volume 0.25 μm enhancement / depletion (E/D)-mode pseudomorphic highelectron mobility (pHEMT) AlGaAs / InGaAs based transistor process. Released as TQP25, the 0.25 μm gate length target is possible by utilizing a sidewall spacer process and is a hybrid of TQPED (0.5 μm) and the TQP13 (0.13 μm) pHEMT processes from TriQuint. Typical Depletion-FET (DFET) parameters include a 50 GHz unity current gain cut-off frequency (Ft), -900 mV pinchoff voltage, 550 mA/mm Imax (Vgs = 0.9V), 1.0 Ωmm on resistance, and a 12 V minimum breakdown voltage. Additionally, the TQP25 process presented here includes a 0.35 μ μ μ μm Enhancement-FET (EFET) not typical at this technology node. Nominal EFET parameters are a 45 GHz Ft, a 300 mV threshold voltage, 1.3 Ω-mm on-resistance, and a 12 V minimum breakdown voltage. Passive components include two thin film resistor options (50 Ω/square and 1KΩ/square), a 0.62 fF/μ μ μ