Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

Abstract ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D 0 X, (e, D 0 ) and (e, D 0 ) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D 0 X emission.