Generation of defects induced by MeV proton implantation in silicon: Influence of nuclear losses

Abstract Deep level transient spectroscopy (DLTS) has been performed on p + –n–n + silicon diodes subjected to medium-dose hydrogen implantation (10 13 cm −2 ) and then annealed (400 °C). Three different energies have been chosen to explore different parts of the damage profile. At least 10 DLTS lines have been resolved and in particular we confirm the presence of two levels located at 0.29 and 0.32 eV from the conduction band ( E c ). Two electron traps located near the mid-gap and not observed for low-doses irradiation, are reported and found to be associated with complex defects including vacancies. Two other levels are also reported. The level at E c −0.20 eV is also observed in case of medium doses whereas the level at E c −0.36 eV is originating from an impurity-related complex involving carbon.