Dielectrically Modulated Hetero Channel Double Gate MOSFET as a Label Free Biosensor

A dielectric modulation (DM) highly sensitive InP/InGaAs/InP hetero channel dual material double gate MOSFET (H-DMDG MOSFET) is designed and simulated for accurate identification of the bio-targets such as protein, streptavidin, uricase, biotin, APTES, and Keratin. Group III–V based materials are considered for biosensor design for its chemical inertness, high temperature/power ability, and high carrier velocity. Nanogap cavity is incorporated near the source and drain ends within the gate dielectric for sensing the neutral and charged analytes. The simulated parameters of the proposed structure are analyzed by varying dielectric constant and the charge density of the biomolecules. The influence of both the biomolecules on the electrical features like surface potential, drain current, electric field, and sensitivity have been examined. The highest sensitivity of 0.513 and a lower electric field of 1.98 × 106 V/cm is attained at the drain end for K = 8 as compared to other biomolecules.