Effects of growth technique on the microstructure of CuInSe2 ternary semiconductor compound

Abstract X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk C u I n S e 2 specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate the lattice parameters, grain sizes, and microstrains of the two grown samples. For a crystal grown by the vertical Bridgeman method, the vacancy V C u serves as an acceptor, resulting in p-type conduction, whereas the vacancy V S e expected to serve as a donor, occurring in n-type conduction for the crystal grown via the traveling heater technique. The concentration of crystal grown via the VBM is determined to be p-type, whereas the concentration of that grown via the THM is n-type. Concerning C u I n S e 2 crystal, the determined crystallite sizes obtained to be 165 and 182 nm for the VBM and THM, respectively.