Characterization of YIG thin films and vacuum annealing effect by polarized neutron reflectometry and magnetotransport measurements

Nanometer-thick Y3Fe5O12 (YIG) films epitaxially grown on (111) Gd3Ga5O12 with a magnetic dead layer as thin as about 1.2 nm are quantified by polarized neutron reflectivity and magnetization measurements. Vacuum annealing on YIG at 300–400 °C leads to substantial reduction in the anomalous Hall effect, spin Hall magnetoresistance, and spin pumping in YIG/Pt bilayers but causes large enhancement in the spin Seebeck effect. The structural, static, and dynamic magnetic measurements show that the annealing has no discernible influence on the global oxidization states and saturation magnetization of YIG films but introduces subtle defects possibly in the form of oxygen vacancies. This study suggests that subtle defects in thin YIG films have multiple effects on the spin transport properties, and caution should be taken in annealing YIG in vacuum.Nanometer-thick Y3Fe5O12 (YIG) films epitaxially grown on (111) Gd3Ga5O12 with a magnetic dead layer as thin as about 1.2 nm are quantified by polarized neutron reflectivity and magnetization measurements. Vacuum annealing on YIG at 300–400 °C leads to substantial reduction in the anomalous Hall effect, spin Hall magnetoresistance, and spin pumping in YIG/Pt bilayers but causes large enhancement in the spin Seebeck effect. The structural, static, and dynamic magnetic measurements show that the annealing has no discernible influence on the global oxidization states and saturation magnetization of YIG films but introduces subtle defects possibly in the form of oxygen vacancies. This study suggests that subtle defects in thin YIG films have multiple effects on the spin transport properties, and caution should be taken in annealing YIG in vacuum.