Theoretical study of short channel effect in highly scaled GaN HEMTs

2-D simulation of AlGaN/GaN HEMTs was carried out in order to investigate the mechanism of short-channel effect in highly scaled transistors. We demonstrate the impact of varying the barrier thickness as well as the gate lengths and show that high aspect ratio (gate length to barrier thickness) larger than 10 can effectively mitigate the short channel effect. We also show the influence of InGaN channel and the work-function of Schottky contacts on short channel effects.