Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator
2017
This work reports an efficient route for enhancing the stability of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). It is clearly observed that the off-current in IGZO-TFT decreases by usi...
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